Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device
| Autor: | Chao-Sung Lai, Mohamed Boutchich, Mamina Sahoo, David Alamarguy, Haneen Abushammala, Alexandre Jaffre, Yu Jiang, Kai-Ping Chang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Band gap Graphene Oxide General Physics and Astronomy chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Non-volatile memory chemistry.chemical_compound chemistry Stack (abstract data type) law 0103 physical sciences Optoelectronics 0210 nano-technology Fluorographene business |
| Zdroj: | Journal of Applied Physics. 127:245106 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Graphene and 2D analogs such as transition metal dichalcogenides (TMDCs) have been widely investigated for their tuneable electronic properties. There is a large spectrum of applications of such 2D analogs; for example, non-volatile memory, which is a key building block for future low-power consumer electronics. In this work, we have investigated a vertical heterostructure composed of a chemical vapour-deposited molybdenum disulphide transistor channel coupled with silicon tunnel oxide (SiO2) and hafnium oxide as a blocking barrier, with fluorographene (FGr) being used as the charge trapping medium. Owing to the larger trap density of FGr, the memory window is three times larger, and the data retention measurements at room temperature yield a 50% charge loss extrapolated to 10 years. The low barrier at the FGr/SiO2 interface induces a steeper charge loss for holes. Nevertheless, the stack can sustain at least to 550 cycles without showing any sign of degradation. Although bandgap engineering is required to improve the data retention, particularly for the holes, the combination studied here is an encouraging route for 2D-based non-volatile memories. |
| Databáze: | OpenAIRE |
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