MBE growth and characterization of Sn1-xEu xTe
| Autor: | Valmir Antonio Chitta, P. Motisuke, H. Closs, Gerrit E. W. Bauer, Nei F. Oliveira, Paulo H. O. Rappl, A. Y. Ueta, Eduardo Abramof, Jose A. H. Coaquira, V. R. dos Anjos |
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| Rok vydání: | 2004 |
| Předmět: |
Diffraction
Physics business.industry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Spectral line Characterization (materials science) chemistry Electrical resistivity and conductivity Optoelectronics Electrical measurements business Europium Deposition (law) Molecular beam epitaxy |
| Zdroj: | Brazilian Journal of Physics. 34:672-674 |
| ISSN: | 0103-9733 |
| Popis: | Epilayers of Sn1-xEuxTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleaved BaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknesses of epilayers were about 1.5 mm and deposition was carried out at growth temperatures of 300 oC. The structural properties were investigated by high resolution X-ray diffraction and a sharp film degradation could be observed with increasing europium content. Electrical measurements with temperature varying from 300 to 10K indicated that the epilayers present carrier concentration ranging between 3 x 1020 and 6 x 1020cm-3 and a low resistivity from 6.3 x 10-5 to 1.2 x 10-4 W.cm. From optical measurements it could be seen that spectra present a low energy edge corresponding to the beginning of intra band excitations and the high energy edge due to inter band excitations. |
| Databáze: | OpenAIRE |
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