| Autor: |
Takeshi Okagaki, O. Tsuchiya, Eiji Tsukuda, Hiroyuki Takashino, K. Ishikawa, Katsumi Eikyu, Y. Inoue, T. Hayashi, Shoji Wakahara, Motoaki Tanizawa, T. Uchida |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices. 55:2632-2640 |
| ISSN: |
0018-9383 |
| Popis: |
In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator. Using our new model, a numerical study in conjunction with comprehensive bending experiments has demonstrated that (100)-Si has the optimum channel direction along in terms of the device performance of strained 65-nm-node nMOSFETs with contact etch stop layer and that both the shear-strain component and the quantum confinement effect are key factors in contributing to this superiority. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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