Optimization of perpendicular anisotropy of Ta-inserted double CoFeB/MgO interface MTJ’s for STT-MRAM
| Autor: | Subhadra Gupta, Billy D. Clark, Samuel C. Schwarm, Soumalya Paul, Anusha Natarajarathinam, Amritpal Singh |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Magnetoresistive random-access memory Materials science Condensed matter physics Perpendicular magnetic anisotropy 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Tunnel magnetoresistance Nuclear magnetic resonance Stack (abstract data type) Condensed Matter::Superconductivity 0103 physical sciences Perpendicular anisotropy 0210 nano-technology Anisotropy Layer (electronics) Decoupling (electronics) |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 398:54-58 |
| ISSN: | 0304-8853 |
| DOI: | 10.1016/j.jmmm.2015.09.010 |
| Popis: | Ta inserts in double magnetic tunnel junctions have been shown to induce perpendicular magnetic anisotropy. We fabricated the central layers of a CoFeB/MgO based double magnetic tunnel junction with a Ta insertion layer between the free layers of the magnetic tunnel junctions. The thickness of the Ta insert and CoFeB layer were varied from 0.5 to 1.1 nm and 0.9 to 1.7 nm respectively, to find which minimum thickness of Ta will induce perpendicular anisotropy in the MTJ. FMR studies were performed to measure the interfacial anisotropy Ku,i. We demonstrated that the most effective stack minimized the CoFeB thickness while maximizing the Ta thickness. This was balanced with the need to keep both CoFeB layers from decoupling or becoming magnetically dead. |
| Databáze: | OpenAIRE |
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