Modeling of Phase-Change Memory: Nucleation, Growth, and Amorphization Dynamics During Set and Reset: Part II—Discrete Grains
| Autor: | Adam Cywar, Ali Gokirmak, Jake Scoggin, Lhacene Adnane, Zachary Woods |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Arrhenius equation Materials science Nucleation Thermionic emission 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Grain size Electronic Optical and Magnetic Materials law.invention Phase-change memory Crystallography symbols.namesake Chemical physics law 0103 physical sciences symbols Grain boundary Electrical and Electronic Engineering Crystallization 0210 nano-technology Grain boundary strengthening |
| Zdroj: | IEEE Transactions on Electron Devices. 64:4472-4478 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2017.2745500 |
| Popis: | We extend our finite-element model of nucleation, growth, and amorphization in phase-change memory devices to model discrete nucleation and grain boundaries, including the evolution of grains within fully crystalline material during long-term anneals. Electrothermal simulations of set and reset operations include a heat of crystallization model and an Arrhenius expression modeling thermionic emission at grain boundaries. Our simulations capture cycle-to-cycle variations due to stochastic nucleation and the interplay of crystallization, the formation of percolation paths, and thermal runaway. |
| Databáze: | OpenAIRE |
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