Antireflection Properties of Al[sub 2]O[sub 3] and Al[sub x]Ti[sub 1−x]O[sub y] Films on ZnO:Ga Coated Si Wafer for Thin-Film Solar Cell
| Autor: | Jun Kwan Kim, Sun Jin Yun, Jung Wook Lim, Seong Hyun Lee |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry General Chemical Engineering Optical transmittance Reflectivity law.invention Wavelength Reflection (mathematics) Optics Anti-reflective coating law Electrochemistry Optoelectronics General Materials Science Thin film solar cell Wafer Electrical and Electronic Engineering Physical and Theoretical Chemistry business Transparent conducting film |
| Zdroj: | Electrochemical and Solid-State Letters. 13:G17 |
| ISSN: | 1099-0062 |
| Popis: | The antireflection (AR) properties of Al 2 O 3 and Al x Ti 1―x O y films were investigated for the application of an AR coating of thin-film solar cells. Their optical transmittance was measured to exceed 85% over the entire visible and near-IR spectrum. The AR layers of these films coated on transparent conductive oxide (TCO)/Si exhibited 18% lower reflection than an uncoated TCO/Si at wavelengths from 400 to 900 nm. Furthermore, the thicknesses of the AR layers and TCO were demonstrated to influence the amount and shape of reflectivity in the reflection curves for the AR/TCO/Si structure. |
| Databáze: | OpenAIRE |
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