| Autor: |
G.W. Neudeck, Jeremy D. Schaub, Joe C. Campbell, J. Denton, R. Li, Clint L. Schow |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243). |
| DOI: |
10.1109/leos.1998.737744 |
| Popis: |
Summary form only given. We report on a resonant cavity enhanced (RCE) Si photodiode grown by epitaxial lateral overgrowth that has achieved a bandwidth of 27 GHz and a peak efficiency of 54%. This is the highest speed reported for a Si PIN photodiode and the highest bandwidth-efficiency product for any Si-based photodetector. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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