Infrared absorption and electrical properties of AgGaSe2
| Autor: | David H. Matthiesen, Daniel G. Krause, Thomas E. Stenger, Matthew T. Whittaker |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Absorption spectroscopy
Chemistry business.industry Analytical chemistry chemistry.chemical_element Infrared spectroscopy Partial pressure Condensed Matter Physics Inorganic Chemistry Optics Electrical resistivity and conductivity Attenuation coefficient Vacancy defect Materials Chemistry business Absorption (electromagnetic radiation) Selenium |
| Zdroj: | Journal of Crystal Growth. 310:1904-1909 |
| ISSN: | 0022-0248 |
| Popis: | Infrared transmission measurements of Bridgman grown AgGaSe 2 chalcopyrite show a deleterious absorption peak centered at 9.3 μm. The 9.3 μm absorption was reduced by 63% using an additional post-growth heat treatment at 790 °C in a controlled partial pressure of selenium of 0.243 atm for 4000 min. A linear correlation was determined between infrared absorption and the selenium partial pressure during the heat treatments: α 9.3 μm =−0.4048( P Se ) atm −1 cm −1 +0.1322 cm −1 . A linear correlation was also determined between dark resistivity and 9.3 μm absorption coefficient: ρ =−7×10 12 α 9.3 μm Ω cm 2 +1×10 12 Ω cm. This correlation indicates that stoichiometric AgGaSe 2 should have a dark resistivity of 10 12 Ω cm. These results support the identification of the 9.3 μm absorption defect as a native selenium vacancy. |
| Databáze: | OpenAIRE |
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