Improved SiGe power HBT characteristics by emitter layout
| Autor: | Chun ting Pan, Chia Tsung Chang, Yue Ming Hsin, Shou Chien Huang |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Power gain
Materials science business.industry Heterojunction bipolar transistor Thermal resistance Electrical engineering Conductance Power performance Condensed Matter Physics Electronic Optical and Magnetic Materials Power (physics) Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Common emitter |
| Zdroj: | Solid-State Electronics. 52:946-951 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2007.12.009 |
| Popis: | A new emitter finger layout in SiGe HBT to reduce thermal-coupling is presented in this study. By redistributing the emitter fingers of various SiGe HBTs, the thermal resistance reduces significantly from 133 to 88 K/W under room temperature. Thus, in dc performance, output conductance increases from � 2.0 to � 1.6 mA/V. In ac performance, the fMAX shows an improvement over 10%. In power performance, the linear power gain, P 1d B and PAEat P 1d B increase by 0.5 dB, 1.5 dB and 6.2% at 1.8 GHz, respectively. 2007 Elsevier Ltd. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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