Oxide Degradation Resulting from Photoresist Ashing

Autor:	Osama O. Awadelkarim, T. T. Koo, T. Ta, Stephen J. Fonash, P. I. Mikulan, Y. D. Chan
Rok vydání:	1993
Předmět:	Materials science Deep-level transient spectroscopy Dielectric strength business.industry Schottky barrier Oxide Photoresist Capacitance chemistry.chemical_compound Ashing chemistry Optoelectronics business Microwave
Zdroj:	MRS Proceedings. 309
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-309-61
Popis:	In this study, possible SiO2 damage that could result from several different photoresist ashing techniques has been assessed using patterned photoresist over blanket oxides. The types of ashing systems used were RF power (RF), upstream ozone generator (Upstream) and two microwave power reactors (Microwave 1 and Microwave 2). Aluminum capacitors were evaporated on the samples after the ashing for oxide evaluation. Electrical characterization of these MOS structures included capacitance verses voltage and time dependent dielectric breakdown measurements. We also looked for Si substrate damage in these samples using deep level transient spectroscopy and Schottky barrier current-voltage measurements. This characterization showed oxide damage varied widely with ashing tool. In all cases, however, there was no significant Si substrate damage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::62be201f2ab9698591140f20d90a5f8e https://doi.org/10.1557/proc-309-61 Zobrazit plný text záznamu Full text from SpringerLink