The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness
| Autor: | T. Larsen, Ephrem G. Gebreselasie, Louis D. Lanzerotti, S. St Onge, Steven H. Voldman, J. Dunn, Natalie B. Feilchenfeld, Alvin J. Joseph |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Silicon dioxide Electrical engineering chemistry.chemical_compound CMOS chemistry Robustness (computer science) Shallow trench isolation Trench Hardware_INTEGRATEDCIRCUITS Optoelectronics ComputerSystemsOrganization_SPECIAL-PURPOSEANDAPPLICATION-BASEDSYSTEMS Bicmos integrated circuits business |
| Zdroj: | 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.. |
| DOI: | 10.1109/relphy.2005.1493072 |
| Popis: | This paper demonstrates the effect of a new low-cost oxide filled trench isolation structure, and implanted sub-collectors, on the latchup robustness. With scaling and focus on low-cost wireless technology, new technologies are being developed utilizing a shallower oxide-filled trench structure and low-doped implanted sub-collectors. In this paper, the first latchup measurements and corresponding new discoveries are shown, utilizing this new isolation structure and its integration with implanted sub-collectors. This paper compares latchup measurements with the base CMOS technology (e.g. standard dual well p-substrate base technology) to quantify the net improvement. The results are shown with trench isolation only, sub-collector only, and the combined effect of the trench isolation and sub-collector. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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