ELECTROTHERMAL VAPORIZATION ICP-MS(ETV-ICP-MS) DETERMINATION OF IMPURITIES IN PHOTORESIST FOR VERY LARGE SCALE INTEGRATED CIRCUIT(VLSI)

Autor:	Masayuki Yamada, Michio Matsubara, Tohru Eton
Rok vydání:	1991
Předmět:	Detection limit Ashing Impurity Chemistry Standard addition Vaporization Analytical chemistry Photoresist Graphite furnace atomic absorption Inductively coupled plasma mass spectrometry Analytical Chemistry
Zdroj:	Analytical Sciences. 7:1263-1264
ISSN:	1348-2246 0910-6340
DOI:	10.2116/analsci.7.supple_1263
Popis:	A method was developed for the determination of Na, Fe, Mn, Ni and Cu in photoresist for VLSI by ETV-ICP-MS. Photoresist samples were diluted 10 times with an ethoxy ethyl acetate (EEA) The standard addition method was used for the determination of impurities. Ashing temperature, vaporization temperature and carrier gas flow rate were optimized for impurities and some molecular ions in the photoresist. The analytical results obtained were in good agreement with those obtained by graphite furnace atomic absorption spectrometry (GFAAS). The detection limits of Na and Fe in photoresist were 0.06ppb 0.2ppb respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::62a5dfdac4f3e9822b5eae60071f3ee9 https://doi.org/10.2116/analsci.7.supple_1263 Zobrazit plný text záznamu Full text from SpringerLink