The reliability of (AlxGa1?x)0.5In0.5P visible light-emitting diodes
| Autor: | H. Thomas, J. D. G. Lacey, Y.H. Aliyu, D. V. Morgan |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Activation energy Management Science and Operations Research Accelerated aging law.invention Reliability (semiconductor) Homogeneous law Optoelectronics Degradation (geology) Safety Risk Reliability and Quality business Telecommunications Diode Light-emitting diode Visible spectrum |
| Zdroj: | Quality and Reliability Engineering International. 16:45-49 |
| ISSN: | 1099-1638 0748-8017 |
| DOI: | 10.1002/(sici)1099-1638(200001/02)16:1<45::aid-qre302>3.0.co;2-q |
| Popis: | The reliability of AlGaInP double-heterostructure (DH) light-emitting diodes (LEDs) operating typically at 600 nm has been studied. To investigate degradation, accelerated aging at ambient temperatures of 50, 75 and 125°C has been carried out for over 5000 h. The activation energy of homogeneous degradation was determined to be 0.8 eV and an extrapolated half-life in excess of 106 h was estimated at an ambient temperature of 20°C. Copyright © 2000 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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