F-Band, GaN Power Amplifiers
| Autor: | James Schellenberg, Lani Bui, Edmar Camargo, Nicholas Estella |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Physics
F band business.industry Amplifier 020208 electrical & electronic engineering dBm 020206 networking & telecommunications 02 engineering and technology Power level Power (physics) Extremely high frequency Broadband 0202 electrical engineering electronic engineering information engineering Mmic amplifiers Optoelectronics business |
| Zdroj: | 2018 IEEE/MTT-S International Microwave Symposium - IMS. |
| DOI: | 10.1109/mwsym.2018.8439280 |
| Popis: | This paper reports the design and performance of two new GaN MMIC amplifiers operating at F-band frequencies. The first design produces 28–29 dBm from 102 to 118 GHz, while the second, a broadband design, produces a minimum of 25 dBm across the 98 to 122 GHz band. Both designs exhibit a small-signal gain of 20 dB. In addition, we report a multi-MMIC SSPA with an output power of 2–3 W from 102 to 116 GHz. These are the first reported GaN power results above 100 GHz and the highest power level for any solid-state technology at this frequen-cv. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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