Heatsink diamond nanostructures for microwave semiconductor electronics
| Autor: | P. P. Maltsev, A. S. Skripnichenko, E. N. Kulikov, I. A. Leontiev, M. P. Duknovskiy, S. V. Redkin, S. V. Shcherbakov, O. Yu. Kudryashov, N. V. Poboikina, A. K. Smirnova, Yu. Yu. Fedorov, I. A. Glinskiy |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Fabrication
Materials science Silicon Laser cutting chemistry.chemical_element 02 engineering and technology Chemical vapor deposition engineering.material 01 natural sciences 0103 physical sciences General Materials Science Wafer 010302 applied physics business.industry Metallurgy General Engineering Diamond Semiconductor device 021001 nanoscience & nanotechnology Condensed Matter Physics Semiconductor chemistry engineering Optoelectronics 0210 nano-technology business |
| Zdroj: | Nanotechnologies in Russia. 11:480-490 |
| ISSN: | 1995-0799 1995-0780 |
| DOI: | 10.1134/s199507801604011x |
| Popis: | A basic technique for manufacturing and processing polycrystalline diamond as a promising material for heatsinks of high-power microwave semiconductor devices is proposed. The fabrication of polycrystalline diamond wafers by chemical vapor deposition is investigated. The choice of a method for fragmenting polycrystalline diamond wafers is considered and a new technique for low-pressure laser/plasma chemical cutting of wafers in a gaseous medium is proposed which consists of growing polycrystalline diamond on preshaped silicon substrates and subsequent silicon etching. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink