Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
| Autor: | Yukie Hirose, Tetsuya Hayashi, Hideaki Tanaka, Tatsuhiro Suzuki, Yamagami Shigeharu, Masakatsu Hoshi, Satoshi Tanimoto |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Gate dielectric Electrical engineering Time-dependent gate oxide breakdown Condensed Matter Physics law.invention Capacitor CMOS Mechanics of Materials Gate oxide law Electric field MOSFET Optoelectronics General Materials Science Junction temperature business |
| Zdroj: | Materials Science Forum. :795-798 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.600-603.795 |
| Popis: | It was experimentally shown that an ONO gate dielectric carefully formed on 4H-SiC has extremely high reliability even under a negative electric field at least up to a junction temperature of 300°C, making it promising for power MOS and CMOS applications. Medium charge to failure of –30 C/cm2 was achieved for fully processed polycrystalline Si gate MONOS capacitors with an equivalent SiO2 thickness of teq = 44 nm and a 200-μm diameter. The medium time to failure of these capacitors projected for –3 MV/cm exceeds 86 and 6.3 thousand years at room temperature and 300°C, respectively. A parasitic memory action did not appear even when Eox of -6.6 MV/cm was applied for 5000 seconds. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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