Performance of top-gate thin film transistors with solution processed ZnO channel layer and PVP gate dielectric
| Autor: | Changhee Lee, Yongtaek Hong, Jinwoo Kim, Pradipta K. Nayak |
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| Rok vydání: | 2010 |
| Předmět: |
Fabrication
Materials science business.industry Annealing (metallurgy) Gate dielectric chemistry.chemical_element Field effect Surfaces and Interfaces Zinc Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Thin-film transistor Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Saturation (magnetic) Sol-gel |
| Zdroj: | physica status solidi (a). 207:1664-1667 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200983714 |
| Popis: | The performance of top-gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4-vinyl-phenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a potential dielectric layer for transparent electronics. The TFTs with as-prepared ZnO as the channel layer showed a saturation field effect mobility of 6.4 x 10- 3 cm 2 /Vs with an on/off ratio of 30. The performances of the TFTs were enhanced after oxygen annealing of the ZnO channel layer prior to PVP deposition. The TFTs with 1 h oxygen annealed ZnO as the channel layer showed a saturation mobility of 0.05 cm 2 /Vs with an on/off ratio of 2.1 × 10 2 . The obtained results are encouraging for fabrication of all solution processed ZnO based TFTs for cost effective technological applications. |
| Databáze: | OpenAIRE |
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