| Autor: |
T. Chiarella, G. Zschatzsch, Ajay Kumar Kambham, A. De Keersgieter, S. Kolling, Pierre Eyben, C. Drijbooms, Andreas Schulze, Wilfried Vandervorst, Jay Mody, Naoto Horiguchi, Geert Eneman, T. Y. Hoffmann |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2011.6131498 |
| Popis: |
In this work, we demonstrate for the first time 3D-carrier profiling in FinFETs with nm-spatial resolution using SSRM. The results provide information on gate underlap, dopant conformality, source/drain doping profiles. The 3D-carrier profiles as extracted for two different device approaches (extensions vs. extension-less) are conclusive in demonstrating the differences in device performance and are consistent with first order 3D-simulations. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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