Effect of nitrogen flow rate on TaN diffusion barrier layer deposited between a Cu layer and a Si-based substrate
| Autor: | Bor Hui-Yun, Zheng-Da Yang, Shea-Jue Wang, Shih-Fan Chen, Tzu-Hsien Yang, Wei Chao-Nan |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Diffusion barrier Annealing (metallurgy) Process Chemistry and Technology Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Volumetric flow rate Barrier layer Crystallinity 0103 physical sciences Materials Chemistry Ceramics and Composites Surface roughness Thin film 0210 nano-technology |
| Zdroj: | Ceramics International. 43:12505-12510 |
| ISSN: | 0272-8842 |
| Popis: | A TaN x layer was deposited as a barrier between Cu and a p-type Si-based substrate. Various N 2 flow rates were used during deposition along with a fixed Radio Frequency (RF) power and a fixed Ar-sputtering flow rate. The performance of the various TaN x barrier layers was tested and the optimized parameters for preparation were determined. When using a N 2 flow rate of 3.5 sccm and a N 2 /Ar ratio of 1:10 followed by annealing at 700 °C the Ta:N ratio of the TaN x barrier was 10:7. The current leakage of the barrier was lower when using a higher N 2 flow rate during deposition as this produced an amorphous TaN x thin film, and the electric capacitance was relatively greater on insertion of a TaN x layer as a insulation resistance layer when using a higher N 2 flow rate. The surface roughness of the TaN x film, as measured by atomic force microscopy (AFM), slightly increased with increasing N 2 flow rate. The aforementioned processing parameters produced a high-quality amorphous TaN x thin-film layer by adjustment of the TaN x -barrier crystallinity. TaN x barriers produced using the various N 2 flow rates can prevent the diffusion of Cu atoms to the Si substrate. The calculated initial diffusion coefficient of TaN 0.7 annealed at 700 °C, as calculated by Fick's law, was 1.3 × 10 −5 cm 2 /s. X-ray diffraction (XRD) analysis indicated that no Cu-Si compounds were present in the TaN 0.7 layer prepared using a 3.5 sccm N 2 flow rate and a N 2 /Ar ratio of 1:10 followed by annealing at 700 °C. |
| Databáze: | OpenAIRE |
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