Memory write speed up via multi voltage driver on CeidMem Library
| Autor: | G. Ph. Alexiou, Themistoklis Haniotakis, Theodoros Simopoulos |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Speedup
Computer science Nanotechnology Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology law.invention law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Interleaved memory Static random-access memory Electrical and Electronic Engineering Memory refresh Computer memory Dynamic random-access memory business.industry Sense amplifier 020208 electrical & electronic engineering 020206 networking & telecommunications Semiconductor memory Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials business Computer hardware |
| Zdroj: | Microelectronic Engineering. 163:21-25 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2016.05.018 |
| Popis: | A speedup technique for the write function of static memories, achieved via multi voltage manipulation, is presented. The designs created to support this technique and the test circuit that verifies the percentage of the speedup are implemented on physical layout level using the Ceid's CeidMem Static Memory Library and the Ceid's Standard Cell Library. Throughout this technique, the memory write procedure is driven by different voltage levels having as target the write permittivity of each memory cell on the same row to be triggered by an edge pulse on the memory word line signal. This way the memory only triggers the writing procedure, enabling rapid consecutive writes on different rows. The simulation of the test circuit is done in analog level using the extracted view of the cells which are integrated with their parasitic resistors and capacitors. Taking into account the parasitic resistors and capacitors of the test circuit as a whole, the test results are at the most accurate. Display Omitted A static memory, called WDSRAM, with write function speedup is presented.The WDSRAM is 3 times faster than the typical SRAM.The WDSRAM consumes the same power as the typical SRAM.Sweeps and Corners simulation of the WDSRAM is presented and analyzed. |
| Databáze: | OpenAIRE |
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