Structural nature of the N 2 RIE plasma induced slow states and bulk traps in thin SiO 2 Si structures
| Autor: | E Atanassova, A Paskaleva |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Silicon Mechanical Engineering Analytical chemistry Oxide chemistry.chemical_element Plasma Condensed Matter Physics Electron transport chain chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Mechanics of Materials Thermal Intermediate state General Materials Science Reactive-ion etching |
| Zdroj: | Materials Science and Engineering: B. 71:115-119 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(99)00360-8 |
| Popis: | Reactive ion etching (RIE) damage effects on thin (13 nm) thermal SiO 2 on Si have been studied. The comparative analyses of the electrical and XPS results show that 5-min exposure to N 2 plasma operating in RIE mode generates positive charge Q ot in the form of slow states (∼2.5×10 12 cm −2 ) and bulk traps (∼1.3×10 12 cm −2 ). Bulk traps are not uniformly distributed throughout the oxide, their density being greater near the Si SiO 2 interface. Q ot plays a key role in electron transport through the oxide causing pretunneling leakage current enhancement. RIE process favors the generation of constant amount of SiO species through the whole oxide and increases the amount of the three intermediate oxidation states of Si, namely Si 1+ , Si 2+ , Si 3+ , in the transition interfacial region. A broadening of this region after RIE treatment is also detected. It is established that these three intermediate oxidation states of Si are the precursors of the detected slow states whereas the SiO species in the bulk of the oxide account for the bulk traps. |
| Databáze: | OpenAIRE |
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