Total Dose Radiation Effects on Silicon MESFET Circuits
| Autor: | L. R. Hite, H. M. Darley, Theodore W. Houston |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Schottky diode Hardware_PERFORMANCEANDRELIABILITY Circuit reliability Nuclear Energy and Engineering Logic gate Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics MESFET Field-effect transistor Static random-access memory Electrical and Electronic Engineering business Radiation hardening Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | IEEE Transactions on Nuclear Science. 30:4277-4281 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.1983.4333122 |
| Popis: | Silicon MESFET technology is an attractive candidate for a gamma dose hard FET technology suitable for digital logic and sRAM circuits. This paper describes the results of an evaluation of the total dose hardness of Si MESFET circuits of sufficient density, performance, and complexity to allow prediction of the performance of Si MESFET LSI circuits. A simple approach to harden the isolation is demonstrated. Gamma total dose tests show the technology to be radiation hard to at least 106 rad (Si) without any observed degradation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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