Wideband 400 W pulsed power GaN HEMT amplifiers

Autor:	B. Landberg, J. Martin, Ramakrishna Vetury, K. Krishnamurthy, M. J. Poulton
Rok vydání:	2008
Předmět:	Materials science business.industry Amplifier Power bandwidth Gallium nitride High-electron-mobility transistor Pulsed power law.invention chemistry.chemical_compound chemistry law Duty cycle Operational amplifier Optoelectronics Wideband business
Zdroj:	2008 IEEE MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.2008.4633163
Popis:	We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 – 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100μs pulse width obtains an output power in the range of 401 – 446 W over the band with a drain efficiency of 48 – 55%. The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm and advanced source connected field plates for high breakdown voltage. These wideband high power amplifiers are suitable for use in pulsed radar applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6216e882f0c33cdaa11e384996cb3ffd https://doi.org/10.1109/mwsym.2008.4633163 Zobrazit plný text záznamu