Simulation of a ridge-type semiconductor laser with partially formed anti-guiding cladding layers
| Autor: | Takahiro Numai, Daiya Katsuragawa |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Threshold current
Materials science business.industry Cladding (fiber optics) Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Semiconductor Optics law Optoelectronics Electrical and Electronic Engineering business Lasing threshold Computer communication networks |
| Zdroj: | Optical and Quantum Electronics. 47:2161-2167 |
| ISSN: | 1572-817X 0306-8919 |
| DOI: | 10.1007/s11082-014-0090-1 |
| Popis: | A ridge-type semiconductor laser with partially formed anti-guiding cladding layers is proposed, and lasing characteristics are simulated. With increases in the height and the width of the partially formed anti-guiding cladding layers, both kink-level and threshold current increase. When the height is 100 nm and the width is greater than or equal to 15 $$\upmu \hbox {m}$$ for the partially formed anti-guiding cladding layers, kink-free operation is obtained up to the injected current of 2 A. The lowest threshold current for the kink-free operation is 57.0 mA when the height is 100 nm and the width is 15 $$\upmu \hbox {m}$$ for the partially formed anti-guiding cladding layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink