GeSi Nanocrystals in SiO2 Matrix with Extended Photoresponse in Near Infrared
| Autor: | V. S. Teodorescu, Ionel Stavarache, I. Dascalescu, Valentin Adrian Maraloiu, L. Nedelcu, Magdalena Lidia Ciurea |
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| Rok vydání: | 2018 |
| Předmět: |
0301 basic medicine
Diffraction Photocurrent Materials science Silicon Annealing (metallurgy) business.industry Near-infrared spectroscopy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Silicon-germanium 03 medical and health sciences chemistry.chemical_compound 030104 developmental biology chemistry Nanocrystal Transmission electron microscopy Optoelectronics 0210 nano-technology business |
| Zdroj: | 2018 International Semiconductor Conference (CAS). |
| Popis: | The films of SiGe nanocrystals in SiO 2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO 2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge. |
| Databáze: | OpenAIRE |
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