Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs

Autor: Masayuki Imaizumi, Naoki Yutani, Toshikazu Tanioka, Masayuki Furuhashi, S. Yamakawa, Yuji Ebiike, Eisuke Suekawa, Tatsuo Oomori, Yoichiro Tarui, Naruhisa Miura, Shinji Sakai
Rok vydání: 2013
Předmět:
Zdroj: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
DOI: 10.1109/ispsd.2013.6694397
Popis: The threshold voltage of 4H-SiC MOSFET increases drastically by performing wet oxidation after nitridation of gate oxide without significant decrease in the channel effective mobility. The increment of the threshold voltage depends on the wet oxidation conditions, and wet oxidation improves the trade-off between the threshold voltage and the specific on-resistance. We fabricated 600 V 4H-SiC MOSFETs with a threshold voltage of 5.11 V and a specific on-resistance of 5.2 mΩcm2 using the procedure above. The stability of the threshold voltage for the SiC-MOSFETs was confirmed by a HTGB test.
Databáze: OpenAIRE