Diffusion length of holes ina‐Si:H by the surface photovoltage method

Autor:	J. Dresner, Bernard R. Goldstein, D. J. Szostak
Rok vydání:	1981
Předmět:	Materials science Physics and Astronomy (miscellaneous) Hydrogen chemistry Silicon Annealing (metallurgy) Surface photovoltage Analytical chemistry chemistry.chemical_element Photovoltaic effect Irradiation
Zdroj:	Applied Physics Letters. 38:998-999
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.92226
Popis:	The diffusion length L for holes in undoped a‐Si:H films has been measured by using a variation of the surface photovoltage method. Values of L in the range 0.33–0.45 μ were found for samples prepared at substrate temperatures Ts = 240 °C and Ts = 330 °C. After prolonged illumination, a reduction to L
Databáze:	OpenAIRE
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