| Autor: |
R. O. Olson, T. H. Herder, J. S. Blakemore |
| Rok vydání: |
1966 |
| Předmět: |
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| Zdroj: |
Solid-State Electronics. 9:673-680 |
| ISSN: |
0038-1101 |
| DOI: |
10.1016/0038-1101(66)90094-3 |
| Popis: |
A two step deposition/diffusion process was used to establish a quasi-gaussian profile of an electrically active impurity in crystals of Ge and Si (arsenic into p -type germanium and boron into n -type silicon). Junction isolation of the diffused layer permitted study of its conductance in the 2 to 300°K range. The emphasis was on samples for which the post diffusion surface concentration N s 2 was near the density at which metallic conduction supervenes in bulk crystals. For arsenic diffused into germanium such that 10 17 ⩽ N s 2 ⩽ 3 × 10 17 cm −3 , impurity conduction is dominant below 10°K, and the magnitude and temperature dependence of the average conductivity agree rather well with the behaviour of uniformly doped single crystals of similar arsenic density and compensation ratio ( K ∼ 0·03-0·1). For boron in silicon, the correspondence between crystals uniformly doped from the melt and diffused layers may be less quantitative; thus we find well defined acceptor de-ionization and activation energy controlled impurity conduction up to N s 2 ∼ 8 × 10 18 cm −3 , appreciably higher than the metallic transition concentration (5 × 10 18 cm −3 ) reported for bulk crystals. The ratio ( σ 300 / σ 4·2 ) has a critical dependence upon N s 2 , ranging from ∼300 when N s 2 = 6 × 10 18 cm −3 to ∼3 when N s 2 = 10 19 cm −3 . |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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