Characteristics of hetero‐structured thermoelectric devices with a ‐ Si / Mg 2 Si‐stacked thin film layers
| Autor: | Ji Hwa Lee, Giwan Yoon, Tipat Piyapatarakul, Chongsei Yoon, Jae Kwon Ha, Buil Jeon |
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| Rok vydání: | 2018 |
| Předmět: |
Amorphous silicon
Materials science business.industry 020209 energy 02 engineering and technology Magnesium silicide Radio frequency sputtering chemistry.chemical_compound chemistry Thermoelectric effect 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering Thin film Rapid thermal annealing business Layer (electronics) |
| Zdroj: | Electronics Letters. 54:1399-1401 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2018.6352 |
| Popis: | New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg2Si hetero-structure layers were found to be much superior to those of the a-Si layer. |
| Databáze: | OpenAIRE |
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