Stress development kinetics in plasma-enhanced chemical-vapor-deposited silicon nitride films

Autor:	Michael P. Hughey, Robert F. Cook
Rok vydání:	2005
Předmět:	Materials science Hydrogen Annealing (metallurgy) Kinetics Analytical chemistry General Physics and Astronomy chemistry.chemical_element Temperature cycling Chemical vapor deposition Stress (mechanics) chemistry.chemical_compound Silicon nitride chemistry Chemical engineering Thin film
Zdroj:	Journal of Applied Physics. 97:114914
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1927708
Popis:	The kinetics of post-deposition irreversible tensile stress development on annealing in plasma-enhanced chemical-vapor-deposited silicon nitride films are described. Films were deposited at 150, 250, and 300 °C, and in situ stress measurements were performed during thermal cycling and annealing at various temperatures up to 500 °C and for annealing times up to 36 h. A constitutive relationship between stress development and hydrogen concentration change based on a modified first-order rate law that assumes a spread in activation energies for hydrogen reaction and exsolution is proposed and found to adequately describe stress development kinetics. The long-standing belief that stress development is generated by the evolution of bonded hydrogen is validated on comparison of film stress and hydrogen concentration, as measured by forward recoil spectrometry and infrared spectroscopy. Stress development is found to be proportional to the reduction in hydrogen concentration throughout annealing with a proportio...
Databáze:	OpenAIRE
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