Effect of zinc doping on the bandgap and photoluminescence of Zn 2+ -doped TiO 2 nanowires
| Autor: | Nguyen Ngoc Long, Vu Hoang Huong, Vu Thi Tham, Trinh Thi Loan |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Anatase
Photoluminescence Materials science Dopant Band gap Doping Nanowire Analytical chemistry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Electronic Optical and Magnetic Materials Absorption edge Direct and indirect band gaps Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Physica B: Condensed Matter. 532:210-215 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2017.05.027 |
| Popis: | This study was focused on the effect of Zn2+ dopant concentration on the absorption edge and photoluminescence of anatase TiO2 nanowires synthesized by hydrothermal technique. For the undoped anatase TiO2 nanowires, the indirect band gap of 3.26 eV and the direct band gap of 3.58 eV are assigned to the indirect Γ 3 → X 1 b and direct X 2 b → X 1 b transitions, respectively. The Zn2+-doping makes the absorption edge of TiO2:Zn2+ nanowires shift towards the lower energy side (red shift). On the other hand, the replacing Ti4+ ions with Zn2+ ions creates oxygen vacancies (VO) and shallow defects associated with VO. Just these defects are responsible for the enhanced luminescence of Zn2+-doped TiO2 nanowires. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect