Microstructure and voltage-current characteristics of anodic films formed on magnesium in fluoride electrolytes
| Autor: | Sachiko Ono, Noboru Masuko, Hideo Kijima |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Passivation Anodizing Magnesium Mechanical Engineering Inorganic chemistry Metals and Alloys Oxide chemistry.chemical_element Substrate (electronics) Electrolyte chemistry.chemical_compound chemistry Chemical engineering Mechanics of Materials Materials Chemistry Breakdown voltage Fluoride |
| Zdroj: | Journal of Japan Institute of Light Metals. 52:115-121 |
| ISSN: | 1880-8018 0451-5994 |
| Popis: | Formation behavior of anodic oxide films on magnesium in fluoride electrolytes was investigated with attention to the effects of anodizing voltage, pH and aluminum content. In the range of formation voltage between 2 V and 100 V, porous film was formed in alkaline fluoride solution associated with high current density at around 5 V and at breakdown voltage. The critical voltage of breakdown to allow maximum current flow was approximately 60 V and relatively independent on substrate purity. Barrier films or semi-barrier films, which were composed of hydrated outer layer and inner layer, were formed at the other voltages. A peculiar phenomenon of high current density at around 5 V, which may be caused by trans-passive state, was not observed for anodizing in acidic fluoride solutions. In the case of AZ91D, the critical voltage increased to 70 V and peculiar phenomenon at 5 V was not observed, so that only barrier films were formed at less than the critical breakdown voltage. When AlO2− ion was added in the electrolytes, the critical voltage remarkably increased and current density effectively decreased with increasing AlO2− content. The passivation effect of aluminum addition in the electrolytes is more remarkable than the addition in magnesium substrates. The depth profiles of constituent elements showed that aluminum migrated into oxide film to reach near oxide/substrate interface. Atomic ratio of aluminum to magnesium increased with increasing voltage to attain 1/3 at 80 V and crystalline MgAl2O4 and MgO were found in the film. |
| Databáze: | OpenAIRE |
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