Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces
| Autor: | Heiko B. Weber, Michael Krieger, Tomasz Sledziewski |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Passivation Mechanical Engineering Phosphorus Oxide Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences law.invention Capacitor chemistry.chemical_compound Ion implantation chemistry Mechanics of Materials law Plasma-enhanced chemical vapor deposition 0103 physical sciences General Materials Science 0210 nano-technology Deposition (law) |
| Zdroj: | Materials Science Forum. 858:697-700 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.858.697 |
| Popis: | In this work the effect of phosphorus on the electrical properties of n-type 4H-SiC MOS capacitors is studied. Phosphorus ions are implanted into the epitaxial layers prior to the deposition of SiO2 by PECVD, in shallow depths and at concentrations at the oxide-semiconductor interface in the range of (5 x 1017…1 x 1019) cm-3. Those samples are compared with 31P-implanted 4H-SiC MOS capacitors with thermally grown oxides, which were primarily investigated in the previous work of the authors. It is shown that independently of the oxide technology phosphorus may lead to decrease of the density of interface traps, whose response time to the AC voltage is longer than 1 µs. The side-effect of the implantation of phosphorus is generation of the very fast interface states, which are able to follow the frequencies over 1 MHz. |
| Databáze: | OpenAIRE |
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