Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs
| Autor: | Daeseok Lee, Hyunsang Hwang, Jiyong Woo, Sangheon Lee, Euijun Cha |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Oxide Nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Resistive random-access memory Protein filament chemistry.chemical_compound chemistry Resistive switching Electrode Control layer Materials Chemistry Optoelectronics Electrical and Electronic Engineering Current (fluid) business Layer (electronics) |
| Zdroj: | Solid-State Electronics. 102:42-45 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2014.06.011 |
| Popis: | In this paper, we demonstrated different filament formation abilities of two metal oxide layers for reliable switching uniformity of resistive random access memory (ReRAM). We observed, for the first time, set operation exhibited stepwise operation in Pt top electrode (TE)/Ti/HfOx/TaOx/Pt bottom electrode (BE) due to different filament formation abilities of HfOx and TaOx. Compared with the Pt/Ti/HfOx/Pt, the inserted TaOx in the triple-layer can act as a filament control layer for uniform switching. Thus, additionally inserted TaOx plays an important role in ReRAM for its reliable switching. To achieve lower operating current and more uniform switching in the Pt/Ti/HfOx/TaOx/Pt structure, we had controlled oxygen distributions of TaOx layer. Consequently, we achieved a very low operating current (∼45 μA) without switching uniformity degradation. |
| Databáze: | OpenAIRE |
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