Cu(In,Ga)Se2 Solar Cells With In2S3 Buffer Layers Grown by Vacuum Evaporation and Chemical Spray Methods
| Autor: | Verma, R., Buecheler, S., Corica, D., Chirila, A., Seyrling, S., Perrenoud, J., Güttler, D., Hibberd, C.J., Tiwari, A.N. |
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| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: | |
| DOI: | 10.4229/23rdeupvsec2008-3do.6.3 |
| Popis: | 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 2179-2184 In2S3 buffer layers grown by vacuum based physical vapor deposition (PVD) and solution based ultrasonic spray pyrolysis (USP) methods have been studied in this work. Two different variants of the USP method, namely USP-dry and USP-wet, were used to deposit the layers on soda lime glass and Cu(In,Ga)Se2 coated Mo/glass substrates. The X-ray diffraction measurements of the indium sulfide layers grown by USP-dry technique revealed the polycrystalline tetragonal -In2S3 structure. The as-grown amorphous layer deposited by PVD method crystallized into -In2S3 phase after annealing at 200°C in air. The optical band gap of the layer was found to depend on its method of preparation and varied from 2.43 eV to 2.84 eV. The atomic force microscopic images show rough morphology of the USP grown layers while the layers grown by PVD method exhibit a smooth surface. A non-uniform and inhomogeneous growth of the USP-wet layer was observed. Cu(In,Ga)Se2 solar cells with ~30 nm thin PVD grown In2S3 buffer layer yielded higher efficiency cells compared to those with USP grown buffer layers. Keywords: Cu(In,Ga)Se2, In2S3, thermal evaporation, spray pyrolysis, solar cell. |
| Databáze: | OpenAIRE |
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