Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems
| Autor: | Godfrey Gumbs, Zhi Zeng, Wen Xu, Patrick Folkes, Chao Zhang |
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| Rok vydání: | 2008 |
| Předmět: |
Physics
Condensed matter physics Band gap Heterojunction Electronic structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Schrödinger equation symbols.namesake Quantum mechanics Quantum system symbols Poisson's equation Quantum Quantum well |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 40:1536-1538 |
| ISSN: | 1386-9477 |
| Popis: | We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gap quantum well systems. The theoretical model is developed through solving self-consistently the Schrodinger equation for the eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as charge distribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of the quantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistent calculation can be used to understand important experimental findings and are in line with those measured experimentally. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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