Influence of electrostatic forces on the investigation of dopant atoms in layered semiconductors by scanning tunneling microscopy/spectroscopy and atomic force microscopy
| Autor: | M. W. Nelson, Darrell R. Louder, Bruce A. Parkinson, Rudy Schlaf |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Dopant Condensed matter physics business.industry Analytical chemistry Surfaces and Interfaces Electronic structure Scanning capacitance microscopy Condensed Matter Physics Atomic units Surfaces Coatings and Films law.invention Semiconductor law Microscopy Scanning tunneling microscope business Surface states |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1466-1472 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.580563 |
| Popis: | Investigation of the atomic scale topography and electronic structure of dopant sites in semiconductor materials is a promising application of scanning probe microscopies. Dopants have been imaged with scanning tunneling microscopy (STM) on and near the surface of conventional semiconductor materials as well as on layered compounds. On both kinds of materials, dopants are detected as either protrusions or depressions in the STM image. The comparison of the measured heights between the materials shows that the values on layered materials are considerably larger than those on the conventional (three-dimensional) semiconductors. We interpret this as the influence of dopant induced electrostatic forces between the tip and sample leading to a structural deformation of the surface around dopant atoms. In order to investigate the influence of electrostatic forces, we performed STM measurements on p-type MoS2 at different bias voltages. The bias dependence of the images indicates the presence of electrostatic for... |
| Databáze: | OpenAIRE |
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