High efficiency improvements in AlGaN-based ultraviolet light-emitting diodes with specially designed AlGaN superlattice hole and electron blocking layers
| Autor: | Sun Jie, Yi Xinyan, Yang Xian, Huiqing Sun, Zhang Zhuding, Xuancong Fan, Zhiyou Guo |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Mean free path business.industry Electron capture Superlattice 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Thermal velocity 0103 physical sciences Optoelectronics General Materials Science Quantum efficiency Electrical and Electronic Engineering 0210 nano-technology business Leakage (electronics) Diode |
| Zdroj: | Superlattices and Microstructures. 104:19-23 |
| ISSN: | 0749-6036 |
| Popis: | Al x Ga 1-x N/Al 0.6 Ga 0.4 N graded superlattice hole blocking layers (GSL-HBLs) and Al x Ga 1-x N/Al 0.6 Ga 0.4 N graded superlattice electron blocking layers (GSL-EBLs) are applied to the traditional AlGaN-based ultraviolet light-emitting diodes (UVLEDs). This can obtain much higher internal quantum efficiency (IQE) and output power. In order to reveal the underlying physical mechanism of this unique structure, we have studied it numerically by APSYS simulation programs. We find that GSL-EBLs can obviously increase the electron potential height and reduce the hole potential height, produce less electron leakage and more hole injection, leading to higher carrier contration. GSL-HBLs can obviously reduce the hole leakage, reduce the thermal velocity and correspondingly the mean free path of the hot electrons, and increase the electron injection. This enhanced the electron capture efficiency of the multiple quantum wells, which can also help to reduce electron leakage. |
| Databáze: | OpenAIRE |
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