Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI/sup 2/L technology
| Autor: | C.T.M. Chang, D.L. Plumton, B.O. Woods |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Bipolar junction transistor Transistor Heterojunction Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound Integrated injection logic chemistry law Optoelectronics Electrical and Electronic Engineering business Diode Common emitter |
| Zdroj: | IEEE Electron Device Letters. 10:508-510 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.43119 |
| Popis: | A process that integrates isolated-emitter heterojunction bipolar transistors (HBTs) with common-emitter HBTs in the emitter-down epi structure on n/sup +/ substrates is discussed. Overgrowth of the epi onto a p/sup -/ implanted region results in back-to-back diodes for approximately 12-V vertical isolation. Isolated transistors are used in emitter-follower output buffers for heterojunction injection logic (HI/sup 2/L) ring oscillators, demonstrating the integration of the two transistor types. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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