Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations

Autor:	Stephen J. Fonash, V. Suntharalingam, Osama O. Awadelkarim
Rok vydání:	2002
Předmět:	Materials science Silicon business.industry Polysilicon depletion effect Doping chemistry.chemical_element Stress (mechanics) Reliability (semiconductor) P channel chemistry Thin-film transistor Electronic engineering Optoelectronics Degradation (geology) business
Zdroj:	Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays.
DOI:	10.1109/amlcd.1995.540971
Popis:	Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degradation mechanisms in n- and p-channel devices. We present evidence that hydrogen motion can play a role in TFT response to these stresses and show that the response can be very different for n- and p-channel TFTs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::61508c93becd38c6955e3b79c7679583 https://doi.org/10.1109/amlcd.1995.540971 Zobrazit plný text záznamu