Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers
| Autor: | A. A. Yugov, S. N. Knyazev, Yu. P. Kozlova, M. P. Duhnovskii, S. S. Malahov, T. G. Yugova, I. A. Belogorokhov, A. A. Donskov |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Lift (force) chemistry 0103 physical sciences Optoelectronics Sapphire substrate 0210 nano-technology business Layer (electronics) Titanium |
| Zdroj: | Semiconductors. 50:411-414 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616030246 |
| Popis: | The effect of the type of substrate, sapphire substrate (c- and r-orientation) or GaN/Al2O3 template (c- and r-orientations), on the nitridation of an amorphous titanium nanolayer is shown. The effect of the titanium-nanolayer thickness on thick GaN epitaxial layer self-separation from the substrate is revealed. The titanium-nanolayer thickness at which thick GaN layer is reproducibly self-separated is within 20–40 nm. |
| Databáze: | OpenAIRE |
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