Influence of Thermal Nonequilibrium on Recombination, Space Charge, and Transport Phenomena in Bipolar Semiconductors
| Autor: | Yu. G. Gurevich, O. Yu. Titov, I. Ch. Ballardo Rodríguez, B. El Filali |
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| Rok vydání: | 2020 |
| Předmět: |
Physics
Condensed matter physics business.industry Non-equilibrium thermodynamics 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics Space charge Semiconductor 020401 chemical engineering Homogeneity (physics) Thermal natural sciences 0204 chemical engineering 0210 nano-technology Transport phenomena business Recombination |
| Zdroj: | International Journal of Thermophysics. 41 |
| ISSN: | 1572-9567 0195-928X |
| DOI: | 10.1007/s10765-020-02647-2 |
| Popis: | A detailed analysis of the influence of thermal nonequilibrium on transport in semiconductors was carried out. Special attention was paid to the effect of this nonequilibrium on recombination and the space charge. In particular, recombination has the same mathematical expression for band-to-band and Shockley–Read–Hall transitions; the only difference between the expressions of these recombination mechanisms is a different lifetime. For both types of recombination, the space charge and homogeneity in space nonequilibrium temperature do not affect charge transport, but it modifies, of course, the electron and hole concentrations in nonequilibrium conditions. The lifetime can be introduced only for band-to-band recombination under the quasineutrality condition. |
| Databáze: | OpenAIRE |
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