| Autor: |
Y. Hayashide, M. Asakura, T. Katayama, A. Yoshida, Tsuyoshi Horikawa, Teruo Shibano, K. Sato, Hiroshi Kimura, T. Maruyama, S. Kishimura, Y. Ohno, T. Nishimura, H. Sumitani, K. Moriizumi, K. Namba, Hirokazu Miyoshi, H. Itoh, Shin'ichi Satoh, Takahisa Eimori, J. Matsufusa |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of IEEE International Electron Devices Meeting. |
| Popis: |
Thin film of (Ba/sub 0.75/Sr/sub 0.25/)TiO/sub 3/ with equivalent SiO/sub 2/ thickness of 0.47 nm has been developed for capacitor dielectric film of 256 Mbit DRAM. A novel cell design named FOGOS (FOlded Global and Open Segment bit-line cell) structure is also proposed for 256 Mbit DRAM. By combining high dielectric constant film and FOGOS design, we have succeeded in making a practical and integrated cell that has sufficient cell capacitance with planar stacked capacitor, small bitline parasitic capacitance and large lithographic tolerance of alignment and DOF. 0.72 /spl mu/m/sup 2/ cell size based on 0.25 /spl mu/m process technology is realized. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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