Three-dimensional GaN for semipolar light emitters
| Autor: | Ulrich T. Schwarz, Ferdinand Scholz, Klaus Thonke, Clemens Vierheilig, Andreas Hangleiter, A. D. Dräger, Andrey Chuvilin, G. J. Beirne, Martin Feneberg, L. Schade, Michael Jetter, Junjun Wang, Peter Michler, Ute Kaiser, Thomas Wunderer, Sebastian Metzner, Robert A. R. Leute, Frank Bertram, Frank Lipski, Jürgen Christen, Stephan Schwaiger |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Cathodoluminescence Gallium nitride Condensed Matter Physics Laser Epitaxy Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Optics chemistry law Sapphire Optoelectronics Quantum efficiency business Quantum well Light-emitting diode |
| Zdroj: | physica status solidi (b). 248:549-560 |
| ISSN: | 0370-1972 |
| DOI: | 10.1002/pssb.201046352 |
| Popis: | Selective-area epitaxy is used to form three-dimensional (3D) GaN structures providing semipolar crystal facets. On full 2-in. sapphire wafers we demonstrate the realization of excellent semipolar material quality by introducing inverse GaN pyramids. When depositing InGaN quantum wells on such a surface, the specific geometry influences thickness and composition of the films and can be nicely modeled by gas phase diffusion processes. Various investigation methods are used to confirm the drastically reduced piezoelectric polarization on the semipolar planes. Complete electrically driven light-emitting diode test structures emitting in the blue and blue/ green spectral regions show reasonable output powers in the milliwatt regime. Finally, first results of the integration of the 3D structures into a conventional laser design are presented. |
| Databáze: | OpenAIRE |
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