Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells

Autor:	Hidetaka Takato, Masaaki Moriya, Yasuhiro Kida, Tomihisa Tachibana, Katsuhiko Shirasawa, Koji Sueoka, Katsuto Tanahashi, Satoshi Ustunomiya
Rok vydání:	2019
Předmět:	Oxygen precipitation Materials science Chemical engineering Wafer Electronic Optical and Magnetic Materials Ion
Zdroj:	ECS Journal of Solid State Science and Technology. 8:P596-P601
ISSN:	2162-8777 2162-8769
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6109f36a89757e06830e1708576aa66d https://doi.org/10.1149/2.0191910jss Zobrazit plný text záznamu