Raman scattering in sputtered amorphous Ge25Se75-xBix films

Autor:	D. Papadimitriou, B. S. Chao, E. Mytilineou
Rok vydání:	1996
Předmět:	symbols.namesake Chemistry Materials Chemistry Ceramics and Composites symbols Analytical chemistry Condensed Matter Physics Raman spectroscopy Chemical composition Intensity (heat transfer) Raman scattering Electronic Optical and Magnetic Materials Amorphous solid
Zdroj:	Journal of Non-Crystalline Solids. 195:279-285
ISSN:	0022-3093
DOI:	10.1016/0022-3093(95)00571-4
Popis:	Raman spectra of sputtered amorphous Ge25Se75-xBix films, with x from 0 to 19, have been studied. For x = 0 the typical spectrum of an amorphous GeSe3 glass is obtained. It is dominated by the peaks at 200 and 220 cm−1, characteristic of the Ge(Se 1 2 ) 4 tetrahedra and a broad peak at 265 cm−1, due to the excess SeSe bonds. The intensity of the 200, 220, 265 cm−1 peaks decrease and a new broad asymmetric peak appears at 175 cm−1 whose intensity increases with the increase of the amount of Bi incorporated into the films. This later peak is attributed to Bi2Se3 structural units.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::60fda1329f708f890ecd1a4f4c790ee8 https://doi.org/10.1016/0022-3093(95)00571-4 Zobrazit plný text záznamu Full Text from ScienceDirect