| Autor: |
T. Nlarschner, Frans D. Tichelaar, R.T.H. Rongen, JH Joachim Wolter, M.R. Leys, C. A. Verschuren, H Vonk |
| Rok vydání: |
1997 |
| Předmět: |
|
| Zdroj: |
Microelectronics Journal. 28:849-855 |
| ISSN: |
0026-2692 |
| DOI: |
10.1016/s0026-2692(96)00124-3 |
| Popis: |
We present a study of changes in the layer morphology of tensilely strained GalnAs/InP multiple quantum well (MQW) structures in dependence on strain and substrate off-orientation. Growth was performed by chemical beam epitaxy (CBE). For high tensile strain (xGa=0.77) lateral thickness fluctuations evolving into facets of the (411)A type are observed in cross-sectional transmission electron microscopy (TEM). These undulations are parallel to [01 1 ] and present for samples grown on both exactly oriented and off-oriented (100) InP substrates. For off oriented substrates the strain induced generation of macrosteps parallel to the surface steps is detected for xGa = 0.65 and xGa=0.77. The distance and height of the macrosteps directly correspond to the substrate off orientation angle. While the macrostep generation is a direct consequence of surface steps in combination with strain, the occurrence of the undulations might be connected with the (2 × 4) surface reconstruction during CBE growth. Both mechanisms are discussed with respect to experimental and theoretical literature data. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect