Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBE

Autor:	T. Nlarschner, Frans D. Tichelaar, R.T.H. Rongen, JH Joachim Wolter, M.R. Leys, C. A. Verschuren, H Vonk
Rok vydání:	1997
Předmět:	Materials science Strain (chemistry) business.industry General Engineering Nanotechnology Substrate (electronics) Epitaxy Chemical beam epitaxy chemistry.chemical_compound chemistry Ternary compound Transmission electron microscopy Optoelectronics business Layer (electronics) Surface reconstruction
Zdroj:	Microelectronics Journal. 28:849-855
ISSN:	0026-2692
Popis:	We present a study of changes in the layer morphology of tensilely strained GalnAs/InP multiple quantum well (MQW) structures in dependence on strain and substrate off-orientation. Growth was performed by chemical beam epitaxy (CBE). For high tensile strain (xGa=0.77) lateral thickness fluctuations evolving into facets of the (411)A type are observed in cross-sectional transmission electron microscopy (TEM). These undulations are parallel to [01 1 ] and present for samples grown on both exactly oriented and off-oriented (100) InP substrates. For off oriented substrates the strain induced generation of macrosteps parallel to the surface steps is detected for xGa = 0.65 and xGa=0.77. The distance and height of the macrosteps directly correspond to the substrate off orientation angle. While the macrostep generation is a direct consequence of surface steps in combination with strain, the occurrence of the undulations might be connected with the (2 × 4) surface reconstruction during CBE growth. Both mechanisms are discussed with respect to experimental and theoretical literature data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::60f8634aa348dc946a50986170af6291 https://doi.org/10.1016/s0026-2692(96)00124-3 Zobrazit plný text záznamu Full Text from ScienceDirect