Structure of (111) CdTe epilayers on misoriented (001) GaAs
| Autor: | C. Chami, Y. Gobil, J. Fontenille, Guy Feuillet, Joel Cibert, Serge Tatarenko, R. Danielou, A. Ponchet, K. Saminadayar, E. Ligeon |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
chemistry.chemical_classification
Misorientation Condensed Matter::Other business.industry General Physics and Astronomy Crystal growth Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Cadmium telluride photovoltaics Condensed Matter::Materials Science Crystallography Tilt (optics) chemistry Optoelectronics business Crystal twinning Inorganic compound |
| Zdroj: | Journal of Applied Physics. 67:2428-2433 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.345512 |
| Popis: | Results concerning [111]CdTe growth on misoriented (001) GaAs substrates are presented and discussed. Growing CdTe on GaAs substrates with Ga steps results in twin‐free layers, which is not the case for As steps. The tilt of the (111) CdTe planes with respect to the (001) GaAs planes is reported versus the GaAs substrate misorientation. We propose a model that establishes a correspondence between the measured tilt and the presence of interface dislocations as observed by high‐resolution electron microscopy. This model also takes into account the effects of the surface morphology on the suppression of twins. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|