| Autor: |
Matthew J. Breitwisch, Tien-Yen Wang, Richard C. Jordan, Roger W. Cheek, Thomas M. Maffitt, Jackie Morrish, Hsiang-Lan Lung, Chung H. Lam, Alejandro G. Schrott, Scott C. Lewis, Jing Li, Chao-I Wu |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 3rd IEEE International Memory Workshop (IMW). |
| Popis: |
This paper presents a novel reconfigurable sensing scheme with the flexibility to change reading precision of analog resistance levels for MLC PCM. A 2Mcell PCM chip was fabricated in 90nm CMOS technology and was tested. Operating at 8-bits precision (adequate for 7b/cell PCM i.e., 128 resistance levels), read access latency is 5μs (measured at 50MHz clock), compared to 35-50μs in state-of-art 2b/cell NAND Flash. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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