Low-temperature crack-free Si3N4 nonlinear photonic circuits for CMOS-compatible optoelectronic co-integration
| Autor: | Pierre Brianceau, Marco Casale, Sebastien Kerdiles, Corrado Sciancalepore, Houssein El Dirani, Vincent Hugues |
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| Rok vydání: | 2017 |
| Předmět: |
Silicon photonics
Materials science Silicon business.industry Photonic integrated circuit Copper interconnect chemistry.chemical_element 02 engineering and technology Nitride 01 natural sciences 010309 optics Resonator 020210 optoelectronics & photonics chemistry visual_art 0103 physical sciences Electronic component 0202 electrical engineering electronic engineering information engineering visual_art.visual_art_medium Optoelectronics Photonics business |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2249666 |
| Popis: | In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing (~1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs). |
| Databáze: | OpenAIRE |
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